Growth Mechanism and Chemical Structure of Amorphous Hydrogenated Silicon Carbide (a-SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 1
A.M. Wrobel, A. Walkiewicz-Pietrzykowska, M. Ahola, I.J. Vayrynen, F.J. Ferrer, A.R. González-Elipe
Chemical Vapor Deposition, 15 (2009) 39-46
doi: 10.1002/cvde.200806726
2007
Optically Active Thin Films Deposited by Plasma Polymerization of Dye Molecules
A. Barranco, F. Aparicio, A. Yanguas-Gil, P. Groening, J. Cotrino, A.R. González-Elipe
Chemical Vapor Deposition, 13 (2007) 319–325
doi: 10.1002/cvde.200606552
2006
Plasma Characterization of Oxygen-Tetramethylsilane Mixtures for the Plasma-Enhanced CVD of SiOxCyHz Thin Films
A. Yanguas-Gil, A. Barranco, J. Cotrino, P. Gröning, A.R. González-Elipe
Chemical Vapor Deposition, 12 (2006) 728-735
doi: 10.1002/cvde.200606496