Growth Mechanism and Chemical Structure of Amorphous Hydrogenated Silicon Carbide (a-SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 1
A.M. Wrobel, A. Walkiewicz-Pietrzykowska, M. Ahola, I.J. Vayrynen, F.J. Ferrer, A.R. González-Elipe
Chemical Vapor Deposition, 15 (2009) 39-46
doi: 10.1002/cvde.200806726
2007
Scaling behavior and mechanism of formation of SiO2 thin films grown by plasma-enhanced chemical vapor deposition
A. Yanguas-Gil, J. Cotrino, A. Walkiewicz-Pietrzykowska, A.R. González-Elipe
Physical Review B, 76 (2007) 075314 (1-8)
doi: 10.1103/PhysRevB.76.075314
2006
Type of precursor and synthesis of silicon oxycarbide (SiOxCyH) thin films with a surfatron microwave oxygen/argon plasma
A. Walkiewicz-Pietrzykowska, J.P. Espinós, A.R. González-Elipe
Journal of Vacuum Science and Technology A, 24 (2006) 988-994
doi: 10.1116/1.2204927