Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition
K. Fröhlich, R. Luptak, E. Dobrocka, K. Husekova, K. Cico, A. Rosova, M. Lukosius, A. Abrutis, P. Pisecny, J.P. Espinós
Materials Science in Semiconductor Processing, 9 (2006) 1065-1072
doi: 10.1016/j.mssp.2006.10.025
Fluorescent Plasma Nanocomposite Thin Films Containing Nonaggregated Rhodamine 6G Laser Dye Molecules
A. Barranco, P. Groening
Langmuir, 22 (2006) 6719-6722
doi: 10.1021/la053304d
X-ray photoelectron spectroscopy study of the nucleation processes and chemistry of CdS thin films deposited by sublimation on different solar cell substrate materials
J.P. Espinós, A.I. Martín-Concepción, C. Mansilla, F. Yubero, A.R. González-Elipe
Journal of Vacuum Science and Technology A, 24 (2006) 919-928
doi: 10.1116/1.2198868
Type of precursor and synthesis of silicon oxycarbide (SiOxCyH) thin films with a surfatron microwave oxygen/argon plasma
A. Walkiewicz-Pietrzykowska, J.P. Espinós, A.R. González-Elipe
Journal of Vacuum Science and Technology A, 24 (2006) 988-994
doi: 10.1116/1.2204927
Design and control of porosity in oxide thin films grown by PECVD
A.I. Borras, A. Barranco, A.R. González-Elipe
Journal of Material Science, 41 (2006) 5220-5226
doi: 10.1007/s10853-006-0431-y
Measuring the electron temperature by optical emission spectroscopy in two temperature plasmas at atmospheric pressure: A critical approach
A. Barranco, A. Yanguas-Gil, F. Yubero, A.R. González-Elipe
Journal of Applied Physics, 99 (2006) 033104 (1-6)
doi: 10.1063/1.2170416
Analysis of SiOxCyHzSiOxCyHz polymeric materials by x-ray absorption spectroscopy: Anomalous behavior of the resonant SiKLLSiKLL Auger spectra
A. Barranco, A. Yanguas-Gil, F. Yubero, A.R. González-Elipe
Journal of Applied Physics, 100 (2006) 033706 (1-7)
doi: 10.1063/1.2222043
Plasma Characterization of Oxygen-Tetramethylsilane Mixtures for the Plasma-Enhanced CVD of SiOxCyHz Thin Films
A. Yanguas-Gil, A. Barranco, J. Cotrino, P. Gröning, A.R. González-Elipe
Chemical Vapor Deposition, 12 (2006) 728-735
doi: 10.1002/cvde.200606496