N. McSporran, V.J. Rico, A. Borrás, A.R. González-Elipe, G. Sauthier, E. György, J. Santiso, G. Garcia, A. Figueras, L. Parafianovic, A. Abrutis
Surface and Coatings Technology, 201 (2007) 9365-9368
doi: 10.1016/j.surfcoat.2007.04.049

Indium tantalate (InTaO₄) and nickel doped InTaO₄, In_1 − xNi_xTaO₄ (x = 0.1), thin films were grown by Pulsed Injection Metal Organic Chemical Vapor Deposition (PI-MOCVD). The deposition was carried out using as precursors a solution of Ta(OC₂H₅)₅ and In(THD)₃ in toluene for the InTaO₄ and Ta(OC₂H₅)₅, In(THD)₃ and Ni(THD)₂ in toluene for the In_1 − xNi_xTaO₄ thin films. The compounds formation, films stoichiometry and crystalline structure were studied as a function of substrate temperature and precursors concentration. Crystalline and stoichiometric (indium/tantalum atomic ratio of 1) films were obtained under optimized deposition conditions. Post-deposition heat treatment in N₂ or O₂ atmospheres further improved the crystalline quality of the films. Under optimum growth conditions the films showed no phase segregations, a feature that makes them suitable for future photocatalytic applications. The study of hydrophilic activities of In_1 − xNi_xTaO₄ thin films evidenced a decrease of the water contact angle up to 60° under visible light irradiation and a complete transformation in a superhydrophilic state upon UV irradiation.