(P201430394 20.04.2014)

Our scintillator devices are designed with a multilayer structure of several inorganic scintillators materials. Each scintillators layer, deposited with thin film technology (Gil-Rostra et al. Surf. Coat. Technol. 222 (2013) 144), consists basically of rare earths ions (Eu, Tb, Ce, …) doping insulating (SiO2, ZrO2, Y2O3, …) or semiconductors matrices (TiO2, ZnO, …). The color and intensity of the emitted light of the final device depends on the depth reached by the radiation (electron, ions) impinging on its multilayer structure. In particular, the color of the emitted light is mainly selected by the type of rare earth doping of the active luminescent layers, and its intensity depends on the doping level and film thickness of the active layers. The developed scintillator detectors may find application as beam monitors in materials science applications (SEM or SAM microscopes, ion beam implanters, equipment dedicated to XPS, AES, REELS surface science analysis), in medicine as 3D radiation dose monitors, or in fusion reactors as monitors of magnetohydrodynamic instabilities.



Electron and Ion Energy Scintillator Detector