F.J. Ferrer, F. Frutos, F.J. García-López, A.R. González-Elipe, F. Yubero
Thin Solid Films, 516 (2007) 481-485
doi: 10.1016/j.tsf.2007.07.139

Mixed oxides Zr_xSi_1−xO₂ (0 < x < 1) thin films have been prepared at room temperature by decomposition of (CH₃CH₂O)₃SiH and Zr[OC(CH₃)₃]₄ volatile precursors induced by mixtures of O₂⁺ and Ar⁺ ions. The films were flat and amorphous independently of the Si/Zr ratio and did not present phase segregation of the pure single oxides (SiO₂ and ZrO₂). A 10–23 at.% of H and 1–5 at.% of C atoms remained incorporated in the films depending on the mixture ratio of the Si and Zr precursors and the composition of the bombarding gas used during the deposition process. These impurities are mainly forming hydroxyl and carboxylic groups. Optical refractive index and static permittivity of the films were determined by reflection NIR-Vis spectroscopy and C–V electrical characterization, respectively. It is found that the refractive index increases non-linearly from 1.45 to 2.10 as the Zr content in the thin films increases. The static permittivity also increases non-linearly from ∼ 4 for pure SiO₂ to ∼ 15 for pure ZrO₂. Optical and electrical characteristics of the films are justified by their impurity content and the available theories.