LO. Prieto-López, F. Yubero, R. Machorro, W. de la Cruz
Microelectronics Journal, 39 (2008) 1371–1373
doi: 10.1016/j.mejo.2008.01.048

Optical properties of Zr and ZrO2 films in the energy range from 1.5 to 100 eV were obtained by quantitative analysis of reflection electron energy loss spectroscopy (REELS) and ellipsometry. The films were prepared on (1 1 1) silicon substrates by reactive laser ablation using a zirconium target. For the growth of ZrO2 films a pressure of 5 mTorr of oxygen in the growth chamber was used. The substrate temperature during deposition was View the MathML source. The deposits were studied ex situ by X-ray diffraction (XRD) andin situ by X-ray photoelectron spectroscopy (XPS) and REELS. The ZrO2 films were found to be polycrystalline with monoclinic structure. The XPS results showed that the oxygen pressure used is the optimal control to produce ZrO2 films by laser ablation. A gap of 5 eV for the ZrO2 film was measured by REELS.

Optical properties of Zr and ZrO2 films deposited by laser ablation
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